MDS1652E
MDS1652E is N-Channel Trench MOSFET manufactured by MagnaChip.
Description
The MDS1652E uses advanced Magna Chip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. Excellent low RDS(ON), low gate charge and operation for Battery Applications.
Features
VDS = 30V ID = 16A @VGS = 10V RDS(ON) (MAX)
< 5.0mΩ @VGS = 10V < 8.5mΩ @VGS = 4.5V
5(D) 6(D) 7(D) 8(D)
4(G) 3(S) 2(S) 1(S)
Absolute Maximum Ratings (Ta = 25o C)
Drain-Source Voltage Gate-Source Voltage
Characteristics
Continuous Drain Current (1)
Pulsed Drain Current
Power Dissipation
Single Pulse Avalanche Energy(2) Junction and Storage Temperature Range
TA=25o C TA=100o C
TA=25o C TA=100o C
Thermal Characteristics
Characteristics Thermal Resistance, Junction-to-Ambient (1) Thermal Resistance, Junction-to-Case
Apr. 2011 Rev...
