Datasheet Details
| Part number | MDS1652E |
|---|---|
| Manufacturer | MagnaChip |
| File Size | 1.00 MB |
| Description | N-Channel Trench MOSFET |
| Datasheet |
 MDS1652E Datasheet
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General Description
The MDS1652E uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.
Excellent low RDS(ON), low gate charge and operation for Battery Applications.
Key Features
- VDS = 30V ID = 16A @VGS = 10V RDS(ON) (MAX) < 5.0mΩ @VGS = 10V < 8.5mΩ @VGS = 4.5V 5(D) 6(D) 7(D) 8(D) 4(G) 3(S) 2(S) 1(S) D G S Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current (1) Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy(2) Junction and Storage Temperature Range TA=25oC TA=100oC TA=25oC TA=100oC Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient (1) Th.