MDS1651 Datasheet | MagnaChip

Description The MDS1651 uses advanced Magna Chip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent reliability. MDS1651 is suitable device for PWM, Load Switching and general purpose applications. Features à VDS = 30V à ID = 11.6A@VGS = 10V à RDS(ON) < 17mΩ @VGS = 10V < 22mΩ @VGS = 4.5V Applications à Portable application 5(D) 6(D) 7(D) 8(D) 4(G) 3(S) 2(S) 1(S) Absolute Maximum Ratings (Ta = 25o C) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current Pulsed Drain Current Power Dissipation (1) Single Pulse Avalanche Energy (2) Junction and Storage Temperature Range Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient (1) Thermal Resistance, Junction-to-Case TC=25o C TC=70o C TA=25o C TA=70o C October 2008. Version 1.0 Symbol VDSS...