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MDS1651 - N-Channel Trench MOSFET

General Description

The MDS1651 uses advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent reliability.

and general purpose applications.

Key Features

  • à VDS = 30V à ID = 11.6A@VGS = 10V à RDS(ON) < 17mΩ @VGS = 10V < 22mΩ @VGS = 4.5V.

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Datasheet Details

Part number MDS1651
Manufacturer MagnaChip
File Size 637.95 KB
Description N-Channel Trench MOSFET
Datasheet download datasheet MDS1651 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MDS1651 – Single N-channel Trench MOSFET 30V MDS1651 Single N-Channel Trench MOSFET 30V, 11.6A, 17mΩ General Description The MDS1651 uses advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent reliability. MDS1651 is suitable device for PWM, Load Switching and general purpose applications. Features à VDS = 30V à ID = 11.6A@VGS = 10V à RDS(ON) < 17mΩ @VGS = 10V < 22mΩ @VGS = 4.