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MDS5601 Datasheet Dual N-Channel Trench MOSFET

Manufacturer: MagnaChip

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Datasheet Details

Part number MDS5601
Manufacturer MagnaChip
File Size 669.23 KB
Description Dual N-Channel Trench MOSFET
Download MDS5601 Download (PDF)

General Description

The MDS5601 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.

MDS5601 is suitable for DC/DC converter and general purpose applications.

Overview

MDS5601 – Dual N-Channel Trench MOSFET MDS5601 Dual N-channel Trench MOSFET 30V, 12.9A, 10.

Key Features

  • à VDS = 30V à ID = 12.9A @VGS = 10V à RDS(ON) < 10.5mΩ @VGS = 10V < 16.1mΩ @VGS = 4.5V à 100% UIL Tested à 100% Rg Tested 8(D17)(D16)(D2)5(D2) 4(G2) 2(G13) (S2) 1(S1) Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current (1) Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy (2) Junction and Storage Temperature Range G1 TC=25oC TC=70oC TA=25oC TA=70oC TC=25oC TC=70oC TA=25oC TA=70oC Thermal Characterist.

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