Description
The MDU04N010 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.
Features
- VDS = 40V ID = 100A @VGS = 10V RDS(ON)
< 1.0mΩ @VGS = 10V 100% UIL Tested 100% Rg Tested
D D DD
D D DD
D
S S SG
GS SS
PDFN56
Absolute Maximum Ratings (Ta = 25oC)
Characteristics
Drain-Source Voltage
Gate-Source Voltage Continuous Drain Current (1) Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy (2)
TC=25oC (Silicon Limited) TC=100oC TC=25oC (Package Limited) TA=25oC(3)
TC=25oC TC=100oC TA=25oC(3)
Junction and Storage Temperature Range
Thermal Character.
MDU04N010-MagnaChip.pdf
