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MDU06N031 - N-Channel MOSFET

Datasheet Summary

Description

The MDU06N031 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.

MDU06N031 is suitable device for Synchronous Rectification For Server and general purpose applications.

Features

  •  VDS = 60V  ID = 100A @VGS = 10V  RDS(ON) < 3.1mΩ @VGS = 10V  100% UIL Tested  100% Rg Tested DD DD DD DD D S SSG GS SS PDFN56 Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (1) Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy (2) TC=25oC (Silicon Limited) TC=25oC (Package Limited) TC=100oC (Silicon Limited) TA=25oC(3) TC=25oC TC=100oC TA=25oC(3) Junction and Storage Temperature Range Th.

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Datasheet preview – MDU06N031

Datasheet Details

Part number MDU06N031
Manufacturer MagnaChip
File Size 935.92 KB
Description N-Channel MOSFET
Datasheet download datasheet MDU06N031 Datasheet
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Full PDF Text Transcription

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MDU06N031 Single N-Channel Trench MOSFET 60V MDU06N031 Single N-channel Trench MOSFET 60V, 100A, 3.1mΩ General Description The MDU06N031 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDU06N031 is suitable device for Synchronous Rectification For Server and general purpose applications. Features  VDS = 60V  ID = 100A @VGS = 10V  RDS(ON) < 3.
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