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MDU04N010 - N-Channel MOSFET

General Description

The MDU04N010 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.

MDU04N010 is suitable device for Synchronous Rectification for Server and general purpose applications.

Key Features

  •  VDS = 40V  ID = 100A @VGS = 10V  RDS(ON) < 1.0mΩ @VGS = 10V  100% UIL Tested  100% Rg Tested D D DD D D DD D S S SG GS SS PDFN56 Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (1) Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy (2) TC=25oC (Silicon Limited) TC=100oC TC=25oC (Package Limited) TA=25oC(3) TC=25oC TC=100oC TA=25oC(3) Junction and Storage Temperature Range Thermal Character.

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Datasheet Details

Part number MDU04N010
Manufacturer MagnaChip
File Size 1.10 MB
Description N-Channel MOSFET
Datasheet download datasheet MDU04N010 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MDU04N010 – Single N-Channel Trench MOSFET 40V MDU04N010 Single N-channel Trench MOSFET 40V, 100A, 1.0mΩ General Description The MDU04N010 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDU04N010 is suitable device for Synchronous Rectification for Server and general purpose applications. Features  VDS = 40V  ID = 100A @VGS = 10V  RDS(ON) < 1.