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MDU04N010 - N-Channel MOSFET

Datasheet Summary

Description

The MDU04N010 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.

MDU04N010 is suitable device for Synchronous Rectification for Server and general purpose applications.

Features

  •  VDS = 40V  ID = 100A @VGS = 10V  RDS(ON) < 1.0mΩ @VGS = 10V  100% UIL Tested  100% Rg Tested D D DD D D DD D S S SG GS SS PDFN56 Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (1) Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy (2) TC=25oC (Silicon Limited) TC=100oC TC=25oC (Package Limited) TA=25oC(3) TC=25oC TC=100oC TA=25oC(3) Junction and Storage Temperature Range Thermal Character.

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Datasheet preview – MDU04N010

Datasheet Details

Part number MDU04N010
Manufacturer MagnaChip
File Size 1.10 MB
Description N-Channel MOSFET
Datasheet download datasheet MDU04N010 Datasheet
Additional preview pages of the MDU04N010 datasheet.

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Full PDF Text Transcription

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MDU04N010 – Single N-Channel Trench MOSFET 40V MDU04N010 Single N-channel Trench MOSFET 40V, 100A, 1.0mΩ General Description The MDU04N010 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDU04N010 is suitable device for Synchronous Rectification for Server and general purpose applications. Features  VDS = 40V  ID = 100A @VGS = 10V  RDS(ON) < 1.
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