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MDU04N010VRH - N-channel MOSFET

General Description

The MDU04N010VRH uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.

MDU04N010VRH is suitable device for Synchronous Rectification for Server and general purpose applications.

Key Features

  •  VDS = 40V  ID = 100A @VGS = 10V  Very low on-resistance RDS(ON) < 1.0mΩ @VGS = 10V  100% UIL Tested  100% Rg Tested DDD D D Pin 5,6,7,8 SS SG PDFN56 G S SS Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (1) Pulsed Drain Current TC=25oC TC=100oC TA=25oC(3) Power Dissipation Single Pulse Avalanche Energy (2) TC=25oC TC=100oC TA=25oC(3) Junction and Storage Temperature Range Thermal Characteristics Character.

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Datasheet Details

Part number MDU04N010VRH
Manufacturer MagnaChip
File Size 968.00 KB
Description N-channel MOSFET
Datasheet download datasheet MDU04N010VRH Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MDU04N010VRH– Single N-Channel Trench MOSFET 40V MDU04N010VRH Single N-channel Trench MOSFET 40V, 100A, 1.0mΩ General Description The MDU04N010VRH uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDU04N010VRH is suitable device for Synchronous Rectification for Server and general purpose applications. Features  VDS = 40V  ID = 100A @VGS = 10V  Very low on-resistance RDS(ON) < 1.