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MDU04N010VRH - N-channel MOSFET

Datasheet Summary

Description

The MDU04N010VRH uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.

MDU04N010VRH is suitable device for Synchronous Rectification for Server and general purpose applications.

Features

  •  VDS = 40V  ID = 100A @VGS = 10V  Very low on-resistance RDS(ON) < 1.0mΩ @VGS = 10V  100% UIL Tested  100% Rg Tested DDD D D Pin 5,6,7,8 SS SG PDFN56 G S SS Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (1) Pulsed Drain Current TC=25oC TC=100oC TA=25oC(3) Power Dissipation Single Pulse Avalanche Energy (2) TC=25oC TC=100oC TA=25oC(3) Junction and Storage Temperature Range Thermal Characteristics Character.

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Datasheet Details

Part number MDU04N010VRH
Manufacturer MagnaChip
File Size 968.00 KB
Description N-channel MOSFET
Datasheet download datasheet MDU04N010VRH Datasheet
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Full PDF Text Transcription

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MDU04N010VRH– Single N-Channel Trench MOSFET 40V MDU04N010VRH Single N-channel Trench MOSFET 40V, 100A, 1.0mΩ General Description The MDU04N010VRH uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDU04N010VRH is suitable device for Synchronous Rectification for Server and general purpose applications. Features  VDS = 40V  ID = 100A @VGS = 10V  Very low on-resistance RDS(ON) < 1.
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