Description
The MDU1401S uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.
Features
- VDS = 25V ID = 100A @VGS = 10V RDS(ON)
< 1.05 mΩ @VGS = 10V < 1.40 mΩ @VGS = 4.5V 100% UIL Tested 100% Rg Tested SBD Built In
D
S SSG
GS SS
G
PDFN56
Absolute Maximum Ratings (Ta = 25oC)
Drain-Source Voltage Gate-Source Voltage
Characteristics
Continuous Drain Current (1)
Pulsed Drain Current
Power Dissipation Single Pulse Avalanche Energy (2) Junction and Storage Temperature Range
TC=25oC (Silicon Limited) TC=25oC (Package Limited) TA=25oC
TC=25oC TA=25oC
Symbol VDSS VGSS.
MDU1401S-MagnaChip.pdf
