Description
The MDU2511S uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.
Features
- à VDS = 30V à ID = 188A @VGS = 10V à RDS(ON)
< 1.7 mΩ @VGS = 10V < 2.1 mΩ @VGS = 4.5V à 100% UIL Tested à 100% Rg Tested à SBD Built In
D D DD
D D DD
D
S S SG
GS SS
PDFN56
Absolute Maximum Ratings (Ta = 25oC)
Drain-Source Voltage Gate-Source Voltage
Characteristics
Continuous Drain Current (1)
Pulsed Drain Current
Power Dissipation
Single Pulse Avalanche Energy (2) Junction and Storage Temperature Range
TC=25oC TC=100oC TA=25oC TA=70oC
TC=25oC TC=100oC TA=25oC TA=70oC
Thermal Char.
MDU2511S-MagnaChip.pdf
