Description
The MDV1527 uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.
Features
- VDS = 30V
ID = 20A @VGS = 10V
RDS(ON)
< 15.9mΩ @VGS = 10V
< 23.7mΩ @VGS = 4.5V
100% UIL Tested
100% Rg Tested
D
DDD D
D DDD
S S SG
GS S S
PDFN33
Absolute Maximum Ratings (Ta = 25oC)
Drain-Source Voltage Gate-Source Voltage
Characteristics
Continuous Drain Current (1)
Pulsed Drain Current
Power Dissipation
Single Pulse Avalanche Energy (2) Junction and Storage Temperature Range
TC=25oC (Silicon limited) TC=25oC (Package limited) TC=70oC TA=25oC TA=70oC
TC=25oC TC=70oC.
MDV1527-MagnaChip.pdf
