Description
The MDV1951 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.
Features
- VDS = 60V ID = 12A @VGS = 10V RDS(ON)
< 45mΩ @VGS = 10V < 55mΩ @VGS = 4.5V 100% UIL Tested 100% Rg Tested
DD DD
DD DD
D
S SSG
GS SS
PDFN33
Absolute Maximum Ratings (Ta = 25oC)
Drain-Source Voltage Gate-Source Voltage
Characteristics
Continuous Drain Current (1)
Pulsed Drain Current
Power Dissipation
Single Pulse Avalanche Energy (2) Junction and Storage Temperature Range
TC=25oC (Silicon limited) TC=25oC (Package limited) TC=70oC TA=25oC TA=70oC
TC=25oC TC=70oC TA=25oC TA=7.
MDV1951B-MagnaChip.pdf
