MDV5524 mosfet equivalent, dual n-channel trench mosfet.
FET1
FET2
VDS = 30V ID = 24.5A
VDS = 30V ID = 31.2A @VGS = 10V
RDS(ON) < 14.4mΩ < 21.3mΩ
< 12.6mΩ @VGS = 10V < 15.6mΩ @VGS = 4.5V
100% UIL Tested
100% R.
Features
FET1
FET2
VDS = 30V ID = 24.5A
VDS = 30V ID = 31.2A @VGS = 10V
RDS(ON) < 14.4mΩ < 21.3mΩ
< 12.6mΩ.
The MDV5524 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDV5524 is suitable for DC/DC converter and general purpose applications.
Features
FE.
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