Description
The MDV5524 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.
Features
- FET1
FET2
VDS = 30V ID = 24.5A
VDS = 30V ID = 31.2A @VGS = 10V
RDS(ON) < 14.4mΩ < 21.3mΩ
< 12.6mΩ @VGS = 10V < 15.6mΩ @VGS = 4.5V
100% UIL Tested
100% Rg Tested
S2 5
S2 6
S2 7
G2 8
S1/D2 D1
D14D13D12G11
Absolute Maximum Ratings (Ta = 25oC)
Drain-Source Voltage Gate-Source Voltage
Characteristics
Continuous Drain Current (1)
Pulsed Drain Current
Power Dissipation
Single Pulse Avalanche Energy (2) Junction and Storage Temperature Range
TC=25oC TC=100oC TA=25oC TA=70o.
MDV5524-MagnaChip.pdf
