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MDV5524 Datasheet Dual N-Channel Trench MOSFET

Manufacturer: MagnaChip

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Datasheet Details

Part number MDV5524
Manufacturer MagnaChip
File Size 1.51 MB
Description Dual N-Channel Trench MOSFET
Download MDV5524 Download (PDF)

General Description

The MDV5524 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.

MDV5524 is suitable for DC/DC converter and general purpose applications.

Overview

MDV5524 – Asymmetric Dual N-Channel Trench MOSFET 30V MDV5524 Asymmetric Dual N-channel Trench MOSFET 30V.

Key Features

  • FET1 FET2  VDS = 30V  ID = 24.5A VDS = 30V ID = 31.2A @VGS = 10V  RDS(ON) < 14.4mΩ < 21.3mΩ < 12.6mΩ @VGS = 10V < 15.6mΩ @VGS = 4.5V  100% UIL Tested  100% Rg Tested S2 5 S2 6 S2 7 G2 8 S1/D2 D1 D14D13D12G11 Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current (1) Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy (2) Junction and Storage Temperature Range TC=25oC TC=100oC TA=25oC TA=70o.

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