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MMD65R600Q Datasheet
MMD65R600Q
650V 0.60Ω N-channel MOSFET
Description
MMD65R600Q is power MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of low EMI to designers as well as low switching loss.
Key Parameters
Parameter VDS @ Tj, max RDS(on), max
VGS(th), typ ID
Qg, typ
Value 700 0.60
3 7.3 13.