SLB10N60C Datasheet - Maple Semiconductor

N-Channel MOSFET

SLB10N60C Features

* - 10A, 600V, RDS(on) = 0.75Ω@VGS = 10 V - Low gate charge ( typical 48nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D D2-PAK GS GDS I2-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD

SLB10N60C General Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

SLB10N60C Datasheet (286.73 KB)

SLB10N60C Datasheet Preview — Preview of SLB10N60C PDF

Datasheet Details

Part number:

SLB10N60C

Manufacturer:

Maple Semiconductor

File Size:

286.73 KB

Description:

N-channel mosfet.

📁 Related Datasheet

SLB10N65C N-Channel MOSFET (Maple Semiconductor)

SLB10N65S N-Channel MOSFET (Maple Semiconductor)

SLB120N08G3 85V N-Channel MOSFET (Msemitek)

SLB128B Transmitter (National Semiconductor)

SLB12N65C N-Channel MOSFET (Maple Semiconductor)

SLB1370 Miniature Slide Switches (Apem Components)

SLB13N50C N-Channel MOSFET (Maple Semiconductor)

SLB14N50C 500V N-Channel MOSFET (Maple Semiconductor)

SLB150N06T 60V N-Channel MOSFET (Msemitek)

SLB160N10G3 100V N-Channel MOSFET (Msemitek)

TAGS

SLB10N60C N-Channel MOSFET Maple Semiconductor

Image Gallery

SLB10N60C Features

SLB10N60C General Description

Datasheet Details

File Size:

Description:

SLB10N60C Distributor