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SLB10N65C Datasheet - Maple Semiconductor

N-Channel MOSFET

SLB10N65C Features

* - 10A, 650V, RDS(on) = 0.95Ω@VGS = 10 V - Low gate charge ( typical 48nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D D2-PAK GS GDS I2-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD

SLB10N65C General Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

SLB10N65C Datasheet (288.40 KB)

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Datasheet Details

Part number:

SLB10N65C

Manufacturer:

Maple Semiconductor

File Size:

288.40 KB

Description:

N-channel mosfet.

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SLB10N65C N-Channel MOSFET Maple Semiconductor

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