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SLB4N60C - N-Channel MOSFET

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Datasheet Details

Part number SLB4N60C
Manufacturer Maple Semiconductor
File Size 264.23 KB
Description N-Channel MOSFET
Datasheet download datasheet SLB4N60C Datasheet

General Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.

Overview

SLB4N60C / SLI4N60C SLB4N60C / SLI4N60C 600V N-Channel MOSFET.

Key Features

  • - 4.5A, 600V, RDS(on) = 2.5Ω@VGS = 10 V - Low gate charge ( typical 16nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D D2-PAK GS GDS I2-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (Note 1) Gate-Source Voltage Sin.

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