SLB40N26C - 260V N-Channel MOSFET

Product Overview

Maple Semiconductor

Part number	SLB40N26C
Manufacturer	Maple Semiconductor
File Size	351.12 KB
Description	260V N-Channel MOSFET
Datasheet	SLB40N26C Datasheet
Additional preview pages of the SLB40N26C datasheet.

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.

- 40A, 260V, RDS(on) typ. = 0.12Ω@VGS = 10 V - Low gate charge ( typical 55 nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D D2-PAK GS GDS I2-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLB40N26C/SLI40N26C VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (Note.

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Published: Dec 27, 2018 |