SLB4N60C - N-Channel MOSFET

Product Overview

Maple Semiconductor

Part number	SLB4N60C
Manufacturer	Maple Semiconductor
File Size	264.23 KB
Description	N-Channel MOSFET
Datasheet	SLB4N60C Datasheet
Additional preview pages of the SLB4N60C datasheet.

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.

- 4.5A, 600V, RDS(on) = 2.5Ω@VGS = 10 V - Low gate charge ( typical 16nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D D2-PAK GS GDS I2-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (Note 1) Gate-Source Voltage Sin.

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Published: Apr 11, 2017 |