SLB5N50S Datasheet - Maple Semiconductor

N-Channel MOSFET

SLB5N50S Features

* - 5.0A, 500V, RDS(on) = 1.35Ω@VGS = 10 V - Low gate charge ( typical 26nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D TO-262 TO-261 G GS GDS S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLB5N50S SLI5N50S VD

SLB5N50S General Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

SLB5N50S Datasheet (0.97 MB)

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Datasheet Details

Part number:

SLB5N50S

Manufacturer:

Maple Semiconductor

File Size:

0.97 MB

Description:

N-channel mosfet.

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SLB5N50S N-Channel MOSFET Maple Semiconductor

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SLB5N50S Features

SLB5N50S General Description

Datasheet Details

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Description:

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