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SLB50R290SJ - N-Channel MOSFET

Download the SLB50R290SJ datasheet PDF. This datasheet also covers the SLD-50R-290 variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

theacsh--nb7Lo.oe6wlAeo,gng5a0ytee0.

Vsch,paRerDgcSe(oi(na)ttlyylppy.

Key Features

  • -14A, 500V, RDS(on) typ. = 0.27Ω@VGS = 10 V - Low gate charge ( typical - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability 38nC) DD GDS TO-220 GDS TO-220F GDS DD D2-PAK GS GS D-PAK GDS I2-PAK I-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter D2-PAK/D-PAK I2-PAK /.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SLD-50R-290-SJ.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SLB50R290SJ
Manufacturer Maple Semiconductor
File Size 665.03 KB
Description N-Channel MOSFET
Datasheet download datasheet SLB50R290SJ Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SLB/D/F/I/P /U50R290SJ General Description This Power MOSFET is producFeeadtuurseisng Maple semi‘s Advanced Super-Junction This advanced technology theacsh--nb7Lo.oe6wlAeo,gng5a0ytee0. Vsch,paRerDgcSe(oi(na)ttlyylppy. i=cat0al .5i2lΩo5@nrCeV)dGS = 10 V to minimize conduction loss, pr-oHvigihdreugsguedpneesrsior switching performance, and withstand hig-- F1h0a0set%nswaevitracghlaiynngcpheutlessetedin the avalanche and commutation m-oImdpero.ved dv/dt capability These devices are well suited for AC/DC power conversion SLD50R290SJ,SLU50R290SJ,SLP50R290SJ SLF50R290SJ, SLB50R290SJ, SLI50R290SJ 500V N-Channel MOSFET Features -14A, 500V, RDS(on) typ.= 0.