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SLB5N50S Datasheet N-channel MOSFET

Manufacturer: Maple Semiconductor

Overview: SLB5N50S / SLI5N50S SLB5N50S / SLI5N50S 650V N-Channel MOSFET.

General Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.

These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.

Key Features

  • - 5.0A, 500V, RDS(on) = 1.35Ω@VGS = 10 V - Low gate charge ( typical 26nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D TO-262 TO-261 G GS GDS S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLB5N50S SLI5N50S VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (Note 1).

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SLB5N50S Distributor