SLB5N50S - N-Channel MOSFET

Product Overview

Maple Semiconductor

Datasheet Details

Part number	SLB5N50S
Manufacturer	Maple Semiconductor
File Size	0.97 MB
Description	N-Channel MOSFET
Datasheet	SLB5N50S Datasheet
Additional preview pages of the SLB5N50S datasheet.

Product details

Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

- 5.0A, 500V, RDS(on) = 1.35Ω@VGS = 10 V - Low gate charge ( typical 26nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D TO-262 TO-261 G GS GDS S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLB5N50S SLI5N50S VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (Note 1).

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Published: Dec 28, 2018 |