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SLB80R500SJ - N-Channel MOSFET

Download the SLB80R500SJ datasheet PDF. This datasheet also includes the SLD-80R-500 variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (SLD-80R-500-SJ.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SLB80R500SJ
Manufacturer Maple Semiconductor
File Size 629.86 KB
Description N-Channel MOSFET
Datasheet download datasheet SLB80R500SJ Datasheet

General Description

This Power MOSFET is producFeeadtuurseisng Maple semi‘s Advanced Super-Junction This advanced technology theacsh--nb7Lo.oe6wlAeo,gng5a0ytee0.

Vsch,paRerDgcSe(oi(na)ttlyylppy.

i=cat0al .5i2lΩo5@nrCeV)dGS = 10 V to minimize conduction loss, pr-oHvigihdreugsguedpneesrsior switching performance, and withstand hig-- F1h0a0set%nswaevitracghlaiynngcpheutlessetedin the avalanche and commutation m-oImdpero.ved dv/dt capability These devices are well suited for AC/DC power conversion SLD80R500SJ,SLU80R500SJ,SLP80R500SJ SLF80R500SJ, SLB80R500SJ, SLI80R500SJ 800V N-Channel MOSFET

Overview

SLB/D/F/I/P /U80R500SJ General.

Key Features

  • -11A, 800V, RDS(on) typ. = 0.46Ω@VGS = 10 V - Low gate charge ( typical - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability 38nC) DD GDS TO-220 GDS TO-220F GDS DD D2-PAK GS GS D-PAK GDS I2-PAK I-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter D2-PAK/D-PAK I2-PAK /.

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