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SLB80R600SJ - N-Channel MOSFET

General Description

theacsh--nbL7oo.e6wlAeo,gng5ay0tee0.

Vsch,paRerDgcSe(oi(na)ttylylppy.

Key Features

  • -10A, 800V, RDS(on) typ. = 0.55Ω@VGS = 10 V - Low gate charge ( typical - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability 35nC) DD GDS TO-220 GDS TO-220F GDS DD D2-PAK GS GS D-PAK GDS I2-PAK I-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter D2-PAK/D-PAK I2-PAK / I-.

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Datasheet Details

Part number SLB80R600SJ
Manufacturer Maple Semiconductor
File Size 577.12 KB
Description N-Channel MOSFET
Datasheet download datasheet SLB80R600SJ Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SLB/D/F/I/P /U80R600SJ General Description This Power MOSFET is producFeeadtuurseisng Maple semi‘s Advanced Super-Junction This advanced technology theacsh--nbL7oo.e6wlAeo,gng5ay0tee0. Vsch,paRerDgcSe(oi(na)ttylylppy. i=cat0al .5i2lΩo5n@rCeV)dGS = 10 V to minimize conduction loss, pr-oHvigihdreugsguedpneesrsior switching performance, and withstand hig-- F1h0a0set%nswaevitracghlaiynngcpheutlessetedin the avalanche and commutation m-oImdpero.ved dv/dt capability These devices are well suited for AC/DC power conversion SLD80R600SJ,SLU80R600SJ,SLP80R600SJ SLF80R600SJ, SLB80R600SJ, SLI80R600SJ 800V N-Channel MOSFET Features -10A, 800V, RDS(on) typ.= 0.