SLB80R500SJ Datasheet | Maple Semiconductor

Description This Power MOSFET is produc Feeadtuurseisng Maple semi‘s Advanced Super-Junction This advanced technology theacsh--nb7Lo.oe6wl Aeo,gng5a0ytee0. Vsch,pa Rer Dgc Se(oi(na)ttlyylppy. i=cat0al .5i2lΩo5@nr Ce V)d GS = V to minimize conduction loss, pr-o Hvigihdreugsguedpneesrsior switching performance, and withstand hig-- F1h0a0set%nswaevitracghlaiynngcpheutlessetedin the avalanche and mutation m-o Imdpero.ved dv/dt capability These devices are well suited for AC/DC power conversion SLD80R500SJ,SLU80R500SJ,SLP80R500SJ SLF80R500SJ, SLB80R500SJ, SLI80R500SJ 800V N-Channel MOSFET Features -11A, 800V, RDS(on) typ.= 0.46Ω@VGS = 10 V - Low gate charge ( typical - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability 38n C) TO-220 TO-220F D2-PAK GS D-PAK I2-PAK I-PAK Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter D2-PAK/D-PAK I2-PAK...