SLD80R500SJ Key Features
- 11A, 800V, RDS(on) typ.= 0.46Ω@VGS = 10 V
- Low gate charge ( typical
- High ruggedness
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- Part: SLD80R500SJ
- Manufacturer: Maple Semiconductor
- Size: 629.86 KB
Related Maple Semiconductor Datasheets
| Part Number | Description |
|---|---|
| SLD80R380SJ | N-Channel MOSFET |
| SLD80R600SJ | N-Channel MOSFET |
| SLD80R850SJ | N-Channel MOSFET |
| SLD830C | N-Channel MOSFET |
| SLD830S | N-Channel MOSFET |
SLD80R500SJ Description
This Power MOSFET is producFeeadtuurseisng Maple semi‘s Advanced Super-Junction This advanced technology theacsh--nb7Lo.oe6wlAeo,gng5a0ytee0. Vsch,paRerDgcSe(oi(na)ttlyylppy.