SLD830S - N-Channel MOSFET

Product Overview

Maple Semiconductor

Datasheet Details

Part number	SLD830S
Manufacturer	Maple Semiconductor
File Size	646.27 KB
Description	N-Channel MOSFET
Datasheet	SLD830S Datasheet
Additional preview pages of the SLD830S datasheet.

SLD830S Product details

Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

- 5.0A, 500V, RDS(on)Typ= 1.35Ω@VGS = 10 V - Low gate charge ( typical 26nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D D-PAK I-PAK G GS GDS S Absolute Maximum Ratings TC = 25 ℃ unless otherwise noted Symbol Parameter SLU830S SLD830S VDSS ID IDM VGSS EAS Drain-Source Voltage Drain Current - Continuous (TC = 25℃) Drain Current - Continuous (TC = 100℃) - Pulsed Gate-Source Voltage Single Pulsed Avalanche.

📁 Similar Datasheet

SLD80N03T - 30V N-Channel MOSFET (Msemitek)
SLD80N04T - 40V N-Channel MOSFET (Msemitek)
SLD80N06T - 60V N-Channel MOSFET (Msemitek)
SLD8S12A - TVS Diodes (Littelfuse)
SLD8S13A - TVS Diodes (Littelfuse)
SLD8S14A - TVS Diodes (Littelfuse)
SLD8S15A - TVS Diodes (Littelfuse)
SLD8S16A - TVS Diodes (Littelfuse)
SLD8S17A - TVS Diodes (Littelfuse)
SLD8S18A - TVS Diodes (Littelfuse)

Other Datasheets by Maple Semiconductor

SLD830C - N-Channel MOSFET
SLD830UZ - N-Channel MOSFET
SLD80R380SJ - N-Channel MOSFET
SLD80R500SJ - N-Channel MOSFET
SLD80R600SJ - N-Channel MOSFET
SLD80R850SJ - N-Channel MOSFET
SLD840F - 500V N-Channel MOSFET
SLD840UZ - N-Channel MOSFET

Published: Dec 28, 2018 |