SLD830UZ
Overview
This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
- 5A, 550V, RDS(on) typ. = 1.0Ω@VGS = 10V - Low gate charge ( typical 16.3nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability
- GS D-PAK GDS I-PAK
