Datasheet Details
| Part number | SLD830C |
|---|---|
| Manufacturer | Maple Semiconductor |
| File Size | 306.07 KB |
| Description | N-Channel MOSFET |
| Datasheet |
 SLD830C Datasheet
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General Description
This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Key Features
- - 4.0A, 500V, RDS(on) = 1.5Ω@VGS = 10 V - Low gate charge ( typical 20nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GS D-PAK GDS I-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (Note.