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SLP40N26C Datasheet 260V N-Channel MOSFET

Manufacturer: Maple Semiconductor

Datasheet Details

Part number SLP40N26C
Manufacturer Maple Semiconductor
File Size 377.35 KB
Description 260V N-Channel MOSFET
Download SLP40N26C Download (PDF)

General Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.

Overview

SLP40N26C / SLF40N26C SLP40N26C / SLF40N26C 260V N-Channel MOSFET General.

Key Features

  • - 40A, 260V, RDS(on) typ. = 0.12Ω@VGS = 10 V - Low gate charge ( typical 55 nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLP40N26C SLF40N26C VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (Note 1) Gate-Source Voltage Single.