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SLP60R280SJ - N-Channel MOSFET

Description

This Power MOSFET is produced using Maple semi‘s Advanced Super-Junction technology.

This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • - 15A, 600V, RDS(on) typ. = 0.25Ω@VGS = 10 V - Low gate charge ( typical 43nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLP60R280SJ SLF60R280SJ VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) Drain Current - Pulsed (Note 1) Gate-Source Vo.

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Datasheet Details

Part number SLP60R280SJ
Manufacturer Maple Semiconductor
File Size 1.77 MB
Description N-Channel MOSFET
Datasheet download datasheet SLP60R280SJ Datasheet

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Full PDF Text Transcription

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SLP60R280SJ / SLF60R280SJ SLP60R280SJ / SLF60R280SJ 600V N-Channel MOSFET CB-FET General Description This Power MOSFET is produced using Maple semi‘s Advanced Super-Junction technology. This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for AC/DC power conversion in switching mode operation for higher efficiency. Features - 15A, 600V, RDS(on) typ. = 0.
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