Datasheet Summary
SLD60R2K3SJ / SLU60R2K3SJ
SLD60R2K3SJ / SLU60R2K3SJ
600V N-Channel MOSFET
CB-FET
General Description
This Power MOSFET is produced using Maple semi‘s Advanced Super-Junction technology. This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for AC/DC power conversion in switching mode operation for higher efficiency.
Features
- 2.3A, 600V, RDS(on) typ. = 2.3Ω@VGS = 10 V
- Low gate charge ( typical 7nC)
- High ruggedness
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
D-PAK
I-PAK...