ME2309-G, ME2309 Datasheet - Matsuki

ME2309-G P-Channel 60V (D-S) MOSFET

The ME2309 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as .

ME2309-G Features

* RDS(ON)≦215mΩ@VGS=-10V

* RDS(ON)≦260mΩ@VGS=-4.5V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book

* Portable Equipment

* Battery Powered System

* DC/

ME2309-Matsuki.pdf

ME2309-G Datasheet Preview — This datasheet PDF includes multiple part numbers: ME2309-G, ME2309. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

ME2309-G, ME2309

Manufacturer:

Matsuki

File Size:

931.08 KB

Description:

P-channel 60v (d-s) mosfet.

Note:

This datasheet PDF includes multiple part numbers: ME2309-G, ME2309.
Please refer to the document for exact specifications by model.

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ME2309-G ME2309 P-Channel 60V D-S MOSFET Matsuki

ME2309-G Distributor