Download the ME2309-G datasheet PDF.
This datasheet also covers the ME2309 variant, as both devices belong to the same p-channel 60v (d-s) mosfet family and are provided as variant models within a single manufacturer datasheet.
General Description
The ME2309 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
Key Features
RDS(ON)≦215mΩ@VGS=-10V.
RDS(ON)≦260mΩ@VGS=-4.5V.
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current
capability.
Full PDF Text Transcription for ME2309-G (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
ME2309-G. For precise diagrams, and layout, please refer to the original PDF.
P-Channel 60V (D-S) MOSFET GENERAL DESCRIPTION The ME2309 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMO...
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wer field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION (SOT-23) Top View ME2309/ ME2309-G FEATURES ● RDS(ON)≦215mΩ@VGS=-10V ● RDS(ON)≦260mΩ@VGS=-4.
ME2309-G Datasheet
