ME2320D-G mosfet equivalent, n-channel 20v (d-s) mosfet.
RDS(ON)=21m @VGS=4.5V
RDS(ON)=25 m @VGS=2.5V
RDS(ON)=33 m @VGS=1.8V
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC curr.
Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inve.
The ME2320D is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are parti.
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