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ME2325-G - P-Channel 30V (D-S) MOSFET

This page provides the datasheet information for the ME2325-G, a member of the ME2325 P-Channel 30V (D-S) MOSFET family.

Product Overview

Matsuki

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ME2325-G P-Channel 30V (D-S) MOSFET by Matsuki - Datasheet Preview — Datasheet preview – ME2325-G

Datasheet Details

Part number	ME2325-G
Manufacturer	Matsuki
File Size	1.05 MB
Description	P-Channel 30V (D-S) MOSFET
Datasheet	ME2325-G Datasheet
Additional preview pages of the ME2325-G datasheet.

ME2325-G Product details

Description

The ME2325 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

RDS(ON)≦50mΩ@VGS=-10V.
RDS(ON)≦76mΩ@VGS=-4.5V.
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.

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Published: Mar 29, 2018 |