Matsuki ME2325
The ME2325 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package.GENERAL DESCRIPTION
PIN CONFIGURATION (SOT-23) Top View ME2325/ME2325-GFEATURES
● RDS(ON)≦50mΩ@VGS=-10V● RDS(ON)≦76mΩ@VGS=-4.5V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current capability
APPLICATIONS
● Power Management in Note book● Portable Equipment
● Battery Powered System
● DC/DC Converter
● Load Switch
● DSC
● LCD Display inverter * The Ordering Information: ME2