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ME3587 - N- & P-Channel 20V (D-S) MOSFET

General Description

The ME3587 is the N- and P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Key Features

  • RDS(ON) ≦45mΩ@VGS=4.5V (N-Ch).
  • RDS(ON) ≦68mΩ@VGS=2.5V (N-Ch).
  • RDS(ON) ≦120mΩ@VGS=1.8V (N-Ch).
  • RDS(ON) ≦110mΩ@VGS=-4.5V (P-Ch).
  • RDS(ON)≦130mΩ@VGS=-2.5V (P-Ch).
  • RDS(ON) ≦170mΩ@VGS=-1.8V (P-Ch).
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

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Datasheet Details

Part number ME3587
Manufacturer Matsuki
File Size 1.21 MB
Description N- & P-Channel 20V (D-S) MOSFET
Datasheet download datasheet ME3587 Datasheet

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N- and P-Channel 20V (D-S) MOSFET GENERAL DESCRIPTION The ME3587 is the N- and P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION (TSOP-6) Top View ME3587/ME3587-G FEATURES ● RDS(ON) ≦45mΩ@VGS=4.5V (N-Ch) ● RDS(ON) ≦68mΩ@VGS=2.5V (N-Ch) ● RDS(ON) ≦120mΩ@VGS=1.8V (N-Ch) ● RDS(ON) ≦110mΩ@VGS=-4.5V (P-Ch) ● RDS(ON)≦130mΩ@VGS=-2.5V (P-Ch) ● RDS(ON) ≦170mΩ@VGS=-1.