ME3587-G Overview
The ME3587 is the N- and P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits where low in-line power...
ME3587-G Key Features
- RDS(ON) ≦45mΩ@VGS=4.5V (N-Ch)
- RDS(ON) ≦68mΩ@VGS=2.5V (N-Ch)
- RDS(ON) ≦120mΩ@VGS=1.8V (N-Ch)
- RDS(ON) ≦110mΩ@VGS=-4.5V (P-Ch)
- RDS(ON)≦130mΩ@VGS=-2.5V (P-Ch)
- RDS(ON) ≦170mΩ@VGS=-1.8V (P-Ch)
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current
ME3587-G Applications
- Power Management in Note