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ME3500-G Datasheet N- & P-channel 30v (d-s) MOSFET

Manufacturer: Matsuki

Overview: N- and P-Channel 30V (D-S) MOSFET GENERAL.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

The ME3500 is the N- and P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package.

Key Features

  • RDS(ON) ≦35mΩ@VGS=10V (N-Ch).
  • RDS(ON) ≦52mΩ@VGS=4.5V (N-Ch).
  • RDS(ON) ≦70mΩ@VGS=-10V (P-Ch).
  • RDS(ON) ≦95mΩ@VGS=-4.5V (P-Ch).
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

More Datasheets from Matsuki

Part Number Description
ME3500 N- & P-Channel 30V (D-S) MOSFET
ME3587 N- & P-Channel 20V (D-S) MOSFET
ME3587-G N- & P-Channel 20V (D-S) MOSFET
ME35N06 N-Channel 60V (D-S) MOSFET
ME35N06-G N-Channel 60V (D-S) MOSFET
ME35N06F N-Channel 60V (D-S) MOSFET
ME35N06F-G N-Channel 60V (D-S) MOSFET
ME35N06P N-Channel 60V (D-S) MOSFET
ME35N06P-G N-Channel 60V (D-S) MOSFET
ME35N06T N-Channel 60V (D-S) MOSFET

ME3500-G Distributor