Datasheet4U Logo Datasheet4U.com

ME3500-G - N- & P-Channel 30V (D-S) MOSFET

This page provides the datasheet information for the ME3500-G, a member of the ME3500 N- & P-Channel 30V (D-S) MOSFET family.

Description

The ME3500 is the N- and P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • RDS(ON) ≦35mΩ@VGS=10V (N-Ch).
  • RDS(ON) ≦52mΩ@VGS=4.5V (N-Ch).
  • RDS(ON) ≦70mΩ@VGS=-10V (P-Ch).
  • RDS(ON) ≦95mΩ@VGS=-4.5V (P-Ch).
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

📥 Download Datasheet

Datasheet preview – ME3500-G

Datasheet Details

Part number ME3500-G
Manufacturer Matsuki
File Size 0.96 MB
Description N- & P-Channel 30V (D-S) MOSFET
Datasheet download datasheet ME3500-G Datasheet
Additional preview pages of the ME3500-G datasheet.

📁 Similar Datasheet

  • ME35N06G - N-Channel MOSFET (VBsemi)
  • ME3-ETO - Electrochemical Sensor (Winsen)
  • ME3-HF - Electrochemical Sensor (Winsen)
  • ME3-NO2 - Electrochemical Gas Sensor (Winsen)
  • ME301C - DC-DC Converter (Microne)
  • ME3101 - 500mA Synchronous Step-Down DC/DC Converters (Microne)
  • ME3101A10 - 500mA Synchronous Step-Down DC/DC Converters (Microne)
  • ME3101A12 - 500mA Synchronous Step-Down DC/DC Converters (Microne)
  • ME3101A18 - 500mA Synchronous Step-Down DC/DC Converters (Microne)
  • ME3101A33 - 500mA Synchronous Step-Down DC/DC Converters (Microne)
Other Datasheets by Matsuki
  • ME3500 - N- & P-Channel 30V (D-S) MOSFET
  • ME3587 - N- & P-Channel 20V (D-S) MOSFET
  • ME3587-G - N- & P-Channel 20V (D-S) MOSFET
  • ME35N06 - N-Channel 60V (D-S) MOSFET
  • ME35N06-G - N-Channel 60V (D-S) MOSFET
  • ME35N06F - N-Channel 60V (D-S) MOSFET
  • ME35N06F-G - N-Channel 60V (D-S) MOSFET
  • ME35N06P - N-Channel 60V (D-S) MOSFET

Full PDF Text Transcription

Click to expand full text
N- and P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION The ME3500 is the N- and P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION (TSOP-6) Top View ME3500/ ME3500-G FEATURES ● RDS(ON) ≦35mΩ@VGS=10V (N-Ch) ● RDS(ON) ≦52mΩ@VGS=4.5V (N-Ch) ● RDS(ON) ≦70mΩ@VGS=-10V (P-Ch) ● RDS(ON) ≦95mΩ@VGS=-4.
Published: |