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ME3587 Datasheet N- & P-channel 20v (d-s) MOSFET

Manufacturer: Matsuki

Overview: N- and P-Channel 20V (D-S) MOSFET GENERAL.

Datasheet Details

Part number ME3587
Manufacturer Matsuki
File Size 1.21 MB
Description N- & P-Channel 20V (D-S) MOSFET
Datasheet ME3587-Matsuki.pdf

General Description

The ME3587 is the N- and P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits where low in-line power loss are needed in a very small outline surface mount package.

Key Features

  • RDS(ON) ≦45mΩ@VGS=4.5V (N-Ch).
  • RDS(ON) ≦68mΩ@VGS=2.5V (N-Ch).
  • RDS(ON) ≦120mΩ@VGS=1.8V (N-Ch).
  • RDS(ON) ≦110mΩ@VGS=-4.5V (P-Ch).
  • RDS(ON)≦130mΩ@VGS=-2.5V (P-Ch).
  • RDS(ON) ≦170mΩ@VGS=-1.8V (P-Ch).
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

More Datasheets from Matsuki

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