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ME40P03T-G Datasheet Preview

ME40P03T-G Datasheet

P-Channel MOSFET

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P-Channel 30V (D-S) MOSFET
ME40P03T/ME40P03T-G
GENERAL DESCRIPTION
The ME40P03T is the P-Channel logic enhancement mode power
field effect transistors are produced using high cell density, DMOS
trench technology. This high density process is especially tailored to
minimize on-state resistance.
FEATURES
RDS(ON)11mΩ@VGS=-10V
RDS(ON)16mΩ@VGS=-4.5V
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
Power Management in Note book
DC/DC Converter
Load Switch
LCD Display inverter
PIN CONFIGURATION
(TO-220)
Top View
eOrdering Information: ME40P03T (Pb-free)
ME40P03T-G (Green product-Halogen free)
Absolute Maximum Ratings (TC=25Unless Otherwise Noted)
Parameter
Symbol
Maximum Ratings
Drain-Source Voltage
VDS -30
Gate-Source Voltage
VGS ±20
Continuous Drain Current
TC=25
TC=70
ID
-68.6
-57.4
Pulsed Drain Current
IDM -274
Maximum Power Dissipation
TC=25
TC=70
PD
75
52.5
Operating Junction Temperature
TJ -55 to 175
Thermal Resistance-Junction to Case*
RθJC
2
* The device mounted on 1in2 FR4 board with 2 oz copper.
Unit
V
V
A
A
W
℃/W
DCC
正式發行
MAuagr,,22001102-–VVere1r.s2ion 1.0
01




Matsuki

ME40P03T-G Datasheet Preview

ME40P03T-G Datasheet

P-Channel MOSFET

No Preview Available !

ME40P03T/ME40P03T-G
P-Channel 30V (D-S) MOSFET
Electrical Characteristics (TC =25Unless Otherwise Specified)
Symbol
Parameter
Limit
Min Typ Max
STATIC
BVDSS
VGS(th)
Drain-Source Breakdown Voltage
Gate Threshold Voltage
VGS=0V, ID=-250μA
VDS=VGS, ID=-250μA
-30
-1
-3
IGSS Gate-Body Leakage
VDS=0V, VGS=±20V
±100
IDSS
Zero Gate Voltage Drain Current
VDS=-30, VGS=0V
-1
RDS(ON)
Drain-Source On-Resistance*
VGS=-10V, ID=-20A
VGS=-4.5V, ID=-16A
9 11
12 16
VSD Diode Forward Voltage*
ISD=-25A, VGS=0V
-1.2
DYNAMIC
Qg Total Gate Charge
42.1
Qgs Gate-Source Charge
VDD=-25V, VGS=-4.5V, ID=-24A
13.7
Qgd Gate-Drain Charge
24.9
Ciss Input Capacitance
3130
Coss
Output Capacitance
VDS=-25V, VGS=0V, f=1MHz
376
Crss Reverse Transfer Capacitance
291
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD=-15V, ID=-25A,
VGS =-10V, RG=6.2Ω,
RL=0.6Ω
118
98.6
171
58.6
Notes: a, pulse test: pulse width300us, duty cycle2%, Guaranteed by design, not subject to production testing.
b, Matsuki Electric/ Force mos reserves the right to improve product design, functions and reliability without notice.
Unit
V
V
nA
μA
mΩ
V
nc
pF
ns
MAuagr,,22001102-–VVere1r.s2ion 1.0
DCC
正式發行
02


Part Number ME40P03T-G
Description P-Channel MOSFET
Maker Matsuki
Total Page 5 Pages
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