ME40P03T-G Key Features
- RDS(ON)≦11mΩ@VGS=-10V
- RDS(ON)≦16mΩ@VGS=-4.5V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current
| Part Number | Description |
|---|---|
| ME40P03T | P-Channel MOSFET |
| ME4174 | N-Channel 30V (D-S) MOSFET |
| ME4174-G | N-Channel 30V (D-S) MOSFET |
| ME4410 | N-Channel 30-V (D-S) MOSFET |
| ME4410A | N-Channel 30-V (D-S) MOSFET |