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ME40P03T-G - P-Channel MOSFET

Download the ME40P03T-G datasheet PDF (ME40P03T included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for p-channel mosfet.

Description

The ME40P03T is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • RDS(ON)≦11mΩ@VGS=-10V.
  • RDS(ON)≦16mΩ@VGS=-4.5V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (ME40P03T-Matsuki.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number ME40P03T-G
Manufacturer Matsuki
File Size 701.42 KB
Description P-Channel MOSFET
Datasheet download datasheet ME40P03T-G Datasheet

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Full PDF Text Transcription

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P-Channel 30V (D-S) MOSFET ME40P03T/ME40P03T-G GENERAL DESCRIPTION The ME40P03T is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. FEATURES ● RDS(ON)≦11mΩ@VGS=-10V ● RDS(ON)≦16mΩ@VGS=-4.
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