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ME4436 - N-Channel 60V (D-S) MOSFET

General Description

The ME4436 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Key Features

  • RDS(ON)≦33mΩ@VGS=10V.
  • RDS(ON)≦40mΩ@VGS=4.5V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

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Datasheet Details

Part number ME4436
Manufacturer Matsuki
File Size 1.06 MB
Description N-Channel 60V (D-S) MOSFET
Datasheet download datasheet ME4436 Datasheet

Other Datasheets by Matsuki

Part Number Description
ME4435 P-Channel 30-V (D-S) MOSFET
ME4435-G P-Channel 30-V (D-S) MOSFET
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ME4410B N-Channel 30-V (D-S) MOSFET
ME4410B-G N-Channel 30-V (D-S) MOSFET
ME4411 P-Channel MOSFET
ME4411-G P-Channel MOSFET
ME4412 N-Channel 30-V (D-S) MOSFET
ME4412-G N-Channel 30-V (D-S) MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ME4436(-G) N-Channel 60V (D-S) MOSFET GENERAL DESCRIPTION The ME4436 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package. FEATURES ● RDS(ON)≦33mΩ@VGS=10V ● RDS(ON)≦40mΩ@VGS=4.