ME4812B-G Key Features
- RDS(ON)≦12mΩ@VGS=10V
- RDS(ON)≦21mΩ@VGS=4.5V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current
| Part Number | Description |
|---|---|
| ME4812B | N-Channel 30-V(D-S) MOSFET |
| ME4812 | N-Channel 30-V(D-S) MOSFET |
| ME4812-G | N-Channel 30-V(D-S) MOSFET |
| ME4856 | N-Channel 30-V(D-S) MOSFET |
| ME4856-G | N-Channel 30-V(D-S) MOSFET |