ME4970A Description
The ME4970A-G is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density,.
ME4970A Key Features
- RDS(ON)≦14mΩ@VGS=10V
- RDS(ON)≦20mΩ@VGS=4.5V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current
ME4970A Applications
- Power Management in Note book