ME4970A-G
Overview
The ME4970A-G is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density,.
- RDS(ON)≦14mΩ@VGS=10V
- RDS(ON)≦20mΩ@VGS=4.5V DMOS trench technology. This high density process is especially
- Super high density cell design for extremely low RDS(ON) tailored to minimize on-state resistance. These devices are
- Exceptional on-resistance and maximum DC current particularly suited for low voltage application such as cellular phone capability and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package.
