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ME4970A - Dual N-Channel MOSFET

General Description

The ME4970A-G is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density,

Key Features

  • RDS(ON)≦14mΩ@VGS=10V.
  • RDS(ON)≦20mΩ@VGS=4.5V DMOS trench technology. This high density process is especially.
  • Super high density cell design for extremely low RDS(ON) tailored to minimize on-state resistance. These devices are.
  • Exceptional on-resistance and maximum DC current particularly suited for low voltage.

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Datasheet Details

Part number ME4970A
Manufacturer Matsuki
File Size 970.13 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet ME4970A Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Dual N-Channel 30-V (D-S) MOSFET ME4970A /ME4970A-G GENERAL DESCRIPTION The ME4970A-G is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, FEATURES ● RDS(ON)≦14mΩ@VGS=10V ● RDS(ON)≦20mΩ@VGS=4.5V DMOS trench technology. This high density process is especially ● Super high density cell design for extremely low RDS(ON) tailored to minimize on-state resistance. These devices are ● Exceptional on-resistance and maximum DC current particularly suited for low voltage application such as cellular phone capability and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package.