ME6970 Description
The ME6970 Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits where high-side switching, and low...
ME6970 Key Features
- RDS(ON)≦21mΩ@VGS=10V
- RDS(ON)≦24mΩ@ VGS=4.5V
- RDS(ON)≦32mΩ@ VGS=2.5V
- RDS(ON)≦50mΩ@ VGS=1.8V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current
ME6970 Applications
- Power Management in Note book