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ME7386-G Datasheet N-channel MOSFET

Manufacturer: Matsuki

Overview: N-Channel 30V(D-S) Enhancement MOSFET GENERAL.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

The ME7386 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application such as notebook puter power management and other battery powered circuits where Low-side switching , and low in-line power loss are needed in a very small outline surface mount package.

Key Features

  • RDS(ON)≦6.5mΩ@VGS=10V.
  • RDS(ON)≦11mΩ@VGS=4.5V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

More Datasheets from Matsuki

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ME7386-G Distributor