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ME7646-G - N-Channel MOSFET

This page provides the datasheet information for the ME7646-G, a member of the ME7646 N-Channel MOSFET family.

Description

The ME7646-G is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • RDS(ON)≦8mΩ@VGS=10V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

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Datasheet preview – ME7646-G

Datasheet Details

Part number ME7646-G
Manufacturer Matsuki
File Size 953.19 KB
Description N-Channel MOSFET
Datasheet download datasheet ME7646-G Datasheet
Additional preview pages of the ME7646-G datasheet.

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Full PDF Text Transcription

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N-Channel 60V(D-S) Enhancement MOSFET GENERAL DESCRIPTION The ME7646-G is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as notebook computer power management and other battery powered circuits where Low-side switching , and low in-line power loss are needed in a very small outline surface mount package.
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