ME95N03-G mosfet equivalent, n-channel mosfet.
* RDS(ON)≦3.2mΩ@VGS=10V
* RDS(ON)≦4.2mΩ@VGS=4.5V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC cur.
* Power Management
* DC/DC Converter
* LCD TV & Monitor Display inverter
* CCFL inverter
* Secondary.
The ME95N03 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are partic.
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