Datasheet Details
| Part number | ME9926 |
|---|---|
| Manufacturer | Matsuki |
| File Size | 622.19 KB |
| Description | Dual N-Channel 2.5-V (G-S) MOSFET |
| Datasheet |
 ME9926 Datasheet
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| Part number | ME9926 |
|---|---|
| Manufacturer | Matsuki |
| File Size | 622.19 KB |
| Description | Dual N-Channel 2.5-V (G-S) MOSFET |
| Datasheet |
ME9926 Datasheet
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The ME9926 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package.
Dual N-Channel 2.5-V (G-S) MOSFET GENERAL.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
| Aonetek Semiconductor | ME9926 | Dual N-Channel High Density Trench MOSFET | Aonetek Semiconductor |
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ME9926 | Dual N-Channel MOSFET | VBsemi |
| Part Number | Description |
|---|---|
| ME9926-G | Dual N-Channel 20V (D-S) MOSFET |
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| ME90N03-G | N-Channel MOSFET |
| ME90P03 | P-Channel MOSFET |
| ME90P03-G | P-Channel MOSFET |
| ME9435 | 30V P-Channel Enhancement Mode MOSFET |
| ME9435A | 30V P-Channel Enhancement Mode MOSFET |
| ME95N03 | N-Channel MOSFET |
| ME95N03-G | N-Channel MOSFET |
| ME95N03T | N-Channel MOSFET |