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ME9926 Datasheet Preview

ME9926 Datasheet

Dual N-Channel 2.5-V (G-S) MOSFET

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Dual N-Channel 2.5-V (G-S) MOSFET
GENERAL DESCRIPTION
The ME9926 is the Dual N-Channel logic enhancement mode power
field effect transistors are produced using high cell density, DMOS
trench technology. This high density process is especially tailored to
minimize on-state resistance. These devices are particularly suited
for low voltage application such as cellular phone and notebook
computer power management and other battery powered circuits
where high-side switching and low in-line power loss are needed in a
very small outline surface mount package.
ME9926
FEATURES
RDS(ON)29m@VGS=4.5V
RDS(ON)42m@VGS=2.5V
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
Power Management in Note book
Portable Equipment
Battery Powered System
Load Switch
DSC
PIN CONFIGURATION
(SOP-8)
Top View
Absolute Maximum Ratings (TA=25Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction Temperature
TA=25
TA=70
Thermal Resistance-Junction to Ambient*
Thermal Resistance-Junction to Case
Symbol
VDSS
VGSS
ID
IDM
PD
TJ
RθJA
RθJC
Steady State
20
±12
6
28
2.0
1.2
-55 to 150
T≦10 sec
62.5
Steady State
88
50
e * The device mounted on 1in2 FR4 board with 2 oz copper
Unit
V
V
A
A
W
℃/W
℃/W
July, 2008-Ver1.1
01




Matsuki

ME9926 Datasheet Preview

ME9926 Datasheet

Dual N-Channel 2.5-V (G-S) MOSFET

No Preview Available !

Dual N-Channel 2.5-V (G-S) MOSFET
ME9926
Electrical Characteristics (TA =25Unless Otherwise Specified)
Symbol Parameter
Limit
Min
STATIC
BVDSS
VGS(th)
IGSS
IDSS
ID(ON)
RDS(ON)
VSD
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-Resistance
Diode Forward Voltage
VGS=0, ID=250μA
VDS=VGS, ID=250μA
VDS=0V, VGS=±12V
VDS=20V, VGS=0V
VDS5V, VGS= 4.5V
VGS=4.5V, ID= 6.0A
VGS=2.5V, ID= 5.2A
IS=1.7A, VGS=0V
20
0.4
30
DYNAMIC
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=10V, VGS=4.5V, ID=6.0A
Rg
td(on)
Gate resistance
Turn-On Delay Time
VDS=0V, VGS=0V, f=1MHz
tr Turn-On Rise Time
VDD=10V,ID=1.0A, VGEN=4.5V
td(off)
Turn-Off Delay Time
RG=6Ω
tf Turn-Off Fall Time
Ciss Input capacitance
Coss
Output Capacitance
VDS=15V, VGS=0V, f=1.0MHz
Crss
Reverse Transfer Capacitance
Notes: a. Pulse test; pulse width 300us, duty cycle2%
Typ
22
32
0.74
9.5
2.1
2.6
0.8
9.5
22
47
2.6
550
76
20
Max
0.9
±100
1
29
42
1.2
Unit
V
V
nA
μA
A
m
V
nC
ns
pF
\
July, 2008-Ver1.1
02


Part Number ME9926
Description Dual N-Channel 2.5-V (G-S) MOSFET
Maker Matsuki
Total Page 5 Pages
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